Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique
This study presents a fully integrated complementary metal oxide semiconductor (CMOS) power amplifier (PA) covering LTE-advanced bands from 825 to 915 MHz for cellular application and the bands of 978 MHz universal access transceiver mode and 1090 MHz extended squitter mode of an automatic dependent surveillance-broadcast transmitter for the unmanned aircraft system. The 3.63 mm × 0.95 mm PA including all on-chip input and output matching networks, fabricated using the 0.18 μm CMOS process exhibits peak output power of 24 dBm, modulated output power of >22 dBm at 978 MHz, the maximum power gain of 27 dB and bandwidth of 290 MHz.
IET Microwaves, Antennas, and Propagation
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Roy, Palash and Dawn, Debasis, "Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique" (2017). Institute of Technology Publications. 208.