Title
Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique
Publication Date
12-4-2017
Document Type
Article
Abstract
This study presents a fully integrated complementary metal oxide semiconductor (CMOS) power amplifier (PA) covering LTE-advanced bands from 825 to 915 MHz for cellular application and the bands of 978 MHz universal access transceiver mode and 1090 MHz extended squitter mode of an automatic dependent surveillance-broadcast transmitter for the unmanned aircraft system. The 3.63 mm × 0.95 mm PA including all on-chip input and output matching networks, fabricated using the 0.18 μm CMOS process exhibits peak output power of 24 dBm, modulated output power of >22 dBm at 978 MHz, the maximum power gain of 27 dB and bandwidth of 290 MHz.
Publication Title
IET Microwaves, Antennas, and Propagation
Volume
12
Issue
5
First Page
826
Last Page
832
DOI
10.1049/iet-map.2017.0370
Publisher Policy
pre print, post print
Recommended Citation
Roy, Palash and Dawn, Debasis, "Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique" (2017). School of Engineering and Technology Publications. 208.
https://digitalcommons.tacoma.uw.edu/tech_pub/208
