Title
17-dB-Gain CMOS Power Amplifier at 60GHz
Publication Date
6-1-2008
Document Type
Conference Proceeding
Abstract
A 60 GHz power amplifier with 17dB small signal gain is designed and measured using standard 90nm CMOS process technology. Simulation predicted accurate performances. The 3-dB bandwidth exceeding 57 to 65 GHz is achieved. This power amplifier delivers +5.1dBm output P1dB with a maximum gain of 17dB at 61 GHz for 54mW total DC consumption, achieving 5.8% PAE and a saturated output power of +8.4dBm at 60GHz. This is the highest gain CMOS power amplifier operating in the 60 GHz unlicensed band reported till date. The first temperature dependent output power characteristics of 60GHz CMOS power amplifier shows very stable operation over the entire temperature range between 0°C and +80°C.
Publication Title
2008 IEEE MTT-S International Microwave Symposium Digest
First Page
859
Last Page
862
DOI
10.1109/MWSYM.2008.4632968
Recommended Citation
Dawn, Debasis; Sarkar, Saikat; Sen, Padmanava; Perumana, Bevin; Yeh, David; Pinel, Stephane; and Laskar, Joy, "17-dB-Gain CMOS Power Amplifier at 60GHz" (2008). School of Engineering and Technology Publications. 251.
https://digitalcommons.tacoma.uw.edu/tech_pub/251
